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SH8M11TB1

MOSFET N/P-CH 30V 3.5A 8SOP

Manufacturer ROHM Semiconductor
MPN SH8M11TB1
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet SH8M11TB1.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154\", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 3.5A
-Gate Charge (Qg) @ Vgs 1.9nC @ 5V
-FET Type N and P-Channel
-Vgs(th) (Max) @ Id 2.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 85pF @ 10V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
-Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 5V
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Rds On (Max) @ Id, Vgs 98 mOhm @ 3.5A, 10V
-Power - Max 2W
-Supplier Device Package 8-SOP
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Family FETs - Arrays
-Mounting Type Surface Mount
-Operating Temperature 150°C (TJ)
-Input Capacitance (Ciss) (Max) @ Vds 85pF @ 10V
-Lead Free Status / RoHS Status 1

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