| -Operating Temperature - Junction |
-55掳C ~ 175掳C |
| -Capacitance @ Vr, F |
150pF @ 0V, 1MHz |
| -Supplier Device Package |
PG-TO220-2 |
| -Standard Package |
500 |
| -Diode Type |
Silicon Carbide Schottky |
| -Reverse Recovery Time (trr) |
0ns |
| -Series |
thinQ!鈩�/a> |
| -Mounting Type |
Through Hole |
| -Voltage - Forward (Vf) (Max) @ If |
1.9V @ 4A |
| -Current - Average Rectified (Io) |
4A (DC) |
| -Package / Case |
TO-220-2 |
| -Catalog Drawings |
Circuit |
| -Packaging |
Tube |
| -Speed |
No Recovery Time > 500mA (Io) |
| -Current - Reverse Leakage @ Vr |
200碌A @ 600V |
| -Family |
Diodes, Rectifiers - Single |
| -Voltage - DC Reverse (Vr) (Max) |
600V |
