| -Emitter- Base Voltage VEBO: |
3.5 V |
| -Packaging: |
Tray |
| -DC Collector/Base Gain hfe Min: |
10 |
| -Pd - Power Dissipation: |
183 W |
| -Transistor Polarity: |
NPN |
| -Brand: |
Advanced Semiconductor, Inc. |
| -Package / Case: |
M113 |
| -Collector- Emitter Voltage VCEO Max: |
18 V |
| -Type: |
RF Bipolar Power |
| -Mounting Style: |
Screw |
| -Operating Frequency: |
50 MHz |
| -Continuous Collector Current: |
12 A |
| -Manufacturer: |
Advanced Semiconductor, Inc. |
| -Minimum Operating Temperature: |
- 65 C |
| -Technology: |
Si |
| -RoHS: |
Details |
| -Product Category: |
RF Bipolar Transistors |
| -Configuration: |
Single Dual Emitter |
| -Transistor Type: |
Bipolar Power |
| -Maximum Operating Temperature: |
+ 150 C |
