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RS1E320GNTB

MOSFET N-CH 30V 32A 8-HSOP

Manufacturer ROHM Semiconductor
MPN RS1E320GNTB
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet RS1E320GNTB.pdf
SP1027
Dollar $1.70903
RMB ¥14.1946
Stock type SP1027
Stock num 2475
Stepped
num price
78+ $1.70903
100+ $1.63262
250+ $1.56705
500+ $1.51048
1000+ $1.46119

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Product parameter

-Rds On (Max) @ Id, Vgs 1.9 mOhm @ 32A, 10V
-Power - Max 3W
-Supplier Device Package 8-HSOP
-Gate Charge (Qg) @ Vgs 42.8nC @ 10V
-Category Discrete Semiconductor Products
-FET Type N-Channel
-Vgs(th) (Max) @ Id 2.5V @ 1mA
-Operating Temperature 150°C (TJ)
-Packaging Tape & Reel (TR)
-Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 15V
-Vgs (Max) ±20V
-Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
-Package / Case 8-PowerTDFN
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 32A (Ta)
-Part Status Active
-Manufacturer Rohm Semiconductor
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 2850pF @ 15V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
-Power Dissipation (Max) 3W (Ta), 34.6W (Tc)
-Lead Free Status / RoHS Status 1
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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