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RP1E090XNTCR

MOSFET N-CH 30V 9A MPT6

Manufacturer ROHM Semiconductor
MPN RP1E090XNTCR
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Rds On (Max) @ Id, Vgs 17 mOhm @ 9A, 10V
-Power - Max 2W
-Supplier Device Package MPT6
-Standard Package   1
-Packaging   Digi-Reel®  
-Family FETs - Single
-Mounting Type Surface Mount
-Operating Temperature 150°C (TJ)
-Input Capacitance (Ciss) (Max) @ Vds 440pF @ 10V
-Power Dissipation (Max) 2W (Ta)
-Vgs (Max) ±20V
-Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
-Package / Case 6-SMD, Flat Leads
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 9A (Ta)
-Gate Charge (Qg) @ Vgs 6.8nC @ 5V
-FET Type N-Channel
-Vgs(th) (Max) @ Id 2.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 440pF @ 10V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
-Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
-Packaging Cut Tape (CT)
-Lead Free Status / RoHS Status 1
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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