| -Operating Temperature - Junction |
-55°C ~ 250°C |
| -Capacitance @ Vr, F |
274pF @ 1V, 1MHz |
| -Supplier Device Package |
TO-257 |
| -Diode Type |
Silicon Carbide Schottky |
| -Category |
Discrete Semiconductor Products |
| -Reverse Recovery Time (trr) |
0ns |
| -Family |
Diodes - Rectifiers - Single |
| -Voltage - DC Reverse (Vr) (Max) |
650V |
| -Packaging |
Tube |
| -Current - Average Rectified (Io) |
2.5A |
| -Package / Case |
TO-257-3 |
| -Part Status |
Active |
| -Speed |
No Recovery Time > 500mA (Io) |
| -Manufacturer |
GeneSiC Semiconductor |
| -Current - Reverse Leakage @ Vr |
5µA @ 650V |
| -Mounting Type |
Through Hole |
| -Voltage - Forward (Vf) (Max) @ If |
1.3V @ 2.5A |
