English 简体中文 日本語

1SS387,L3F

DIODE GEN PURP 80V 100MA ESC

Manufacturer Toshiba
MPN 1SS387,L3F
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Operating Temperature - Junction 125°C (Max)
-Capacitance @ Vr, F 3pF @ 0V, 1MHz
-Supplier Device Package ESC
-Diode Type Standard
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 4ns
-Family Diodes - Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 80V
-Packaging Cut Tape (CT)
-Current - Average Rectified (Io) 100mA
-Package / Case SC-79, SOD-523
-Part Status Active
-Speed Small Signal =< 200mA (Io), Any Speed
-Manufacturer Toshiba Semiconductor and Storage
-Current - Reverse Leakage @ Vr 500nA @ 80V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA

Copyright © 1997-2013 NetEase. All Rights Reserved.