English 简体中文 日本語

RN2109MFV(TPL3)

TRANS PREBIAS PNP 150MW VESM

Manufacturer Toshiba
MPN RN2109MFV(TPL3)
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Package / Case SOT-723
-Transistor Type PNP - Pre-Biased
-Supplier Device Package VESM
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
-Resistor - Base (R1) (Ohms) 47k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 22k
-Standard Package   8,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

Copyright © 1997-2013 NetEase. All Rights Reserved.