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RN2105(T5L,F,T)

TRANS PREBIAS PNP 0.1W SSM

Manufacturer Toshiba
MPN RN2105(T5L,F,T)
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 100mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Frequency - Transition 200MHz
-Package / Case SC-75, SOT-416
-Transistor Type PNP - Pre-Biased
-Supplier Device Package SSM
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V

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