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RN1968FE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ES6

制造商 Toshiba
制造商零件编号 RN1968FE(TE85L,F)
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250碌A, 5mA
-Resistor - Base (R1) (Ohms) 22k
-Power - Max 100mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   1
-Packaging   Digi-Reel庐  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Frequency - Transition 250MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Supplier Device Package ES6
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V

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