English 简体中文 日本語

RN1906FE(T5L,F,T)

TRANS 2NPN PREBIAS 0.1W ES6

Manufacturer Toshiba
MPN RN1906FE(T5L,F,T)
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 100mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   4,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Frequency - Transition 250MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Supplier Device Package ES6
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V

Copyright © 1997-2013 NetEase. All Rights Reserved.