English 简体中文 日本語

RN1903FE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ES6

Manufacturer Toshiba
MPN RN1903FE(TE85L,F)
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Resistor - Base (R1) (Ohms) 22k
-Power - Max 100mW
-Resistor - Emitter Base (R2) (Ohms) 22k
-Standard Package   1
-Packaging   Digi-Reel®  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Frequency - Transition 250MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Supplier Device Package ES6
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V

Copyright © 1997-2013 NetEase. All Rights Reserved.