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RN1421TE85LF

TRANS PREBIAS NPN 200MW SMINI

Manufacturer Toshiba
MPN RN1421TE85LF
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 2mA, 50mA
-Resistor - Base (R1) (Ohms) 1k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 1k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Frequency - Transition 300MHz
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type NPN - Pre-Biased
-Supplier Device Package S-Mini
-Current - Collector (Ic) (Max) 800mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA, 1V

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