English 简体中文 日本語

RJH60D5DPK-00#T0

IGBT 600V 75A 200W TO3P

Manufacturer Renesas
MPN RJH60D5DPK-00#T0
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Package / Case TO-3P-3, SC-65-3
-Test Condition 300V, 37A, 5 Ohm, 15V
-Supplier Device Package TO-3P
-Current - Collector (Ic) (Max) 75A
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 100ns
-Voltage - Collector Emitter Breakdown (Max) 600V
-Mounting Type Through Hole
-Switching Energy 650µJ (on), 400µJ (off)
-Packaging Tube
-Power - Max 200W
-IGBT Type Trench
-Td (on/off) @ 25°C 50ns/135ns
-Part Status Active
-Manufacturer Renesas Electronics America
-Gate Charge 78nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 37A
-Input Type Standard

Copyright © 1997-2013 NetEase. All Rights Reserved.