| -Power - Max |
3.1W |
| -Video File |
NexFET Power Block PowerStack™ Packaging Technology Overview |
| -Vgs(th) (Max) @ Id |
1.4V @ 250µA |
| -Packaging |
Tape & Reel (TR) |
| -Rds On (Max) @ Id, Vgs |
2.4 mOhm @ 25A, 8V |
| -Drain to Source Voltage (Vdss) |
25V |
| -Current - Continuous Drain (Id) @ 25°C |
31A (Ta), 100A (Tc) |
| -PCN Design/Specification |
Qualification Revision A 01/Jul/2014 |
| -Online Catalog |
N-Channel Logic Level Gate FETs |
| -Family |
FETs - Single |
| -RoHS |
Lead free / RoHS Compliant |
| -Product Training Modules |
NexFET MOSFET Technology |
| -Design Resources |
Create your power design now with TI’s WEBENCH® Designer |
| -Mounting Type |
Surface Mount |
| -FET Feature |
Logic Level Gate |
| -Package / Case |
8-TDFN Exposed Pad |
| -Supplier Device Package |
8-SON-EP (5x6) |
| -Gate Charge (Qg) @ Vgs |
19nC @ 4.5V |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Series |
NexFET™ |
| -Input Capacitance (Ciss) @ Vds |
3100pF @ 12.5V |
