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RDX045N60FU6

MOSFET N-CH 600V 4.5A TO220FM

Manufacturer ROHM Semiconductor
MPN RDX045N60FU6
SPQ 500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Rds On (Max) @ Id, Vgs 2.1 Ohm @ 2.25A, 10V
-Power - Max 35W
-Supplier Device Package TO-220FM
-Standard Package   500
-Current - Continuous Drain (Id) @ 25掳C 4.5A (Ta)
-FET Type N-Channel
-Vgs(th) (Max) @ Id 4V @ 1mA
-Input Capacitance (Ciss) @ Vds 500pF @ 25V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
-Power Dissipation (Max) 35W (Tc)
-Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
-Lead Free Status / RoHS Status 1
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Package / Case TO-220-3 Full Pack
-Drain to Source Voltage (Vdss) 600V
-Catalog Drawings TO-220FM, TO-220FN
-Gate Charge (Qg) @ Vgs 16nC @ 10V
-Packaging   Bulk  
-Family FETs - Single
-Mounting Type Through Hole
-Operating Temperature 150°C (TJ)
-Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
-Packaging Bulk
-Vgs (Max) ±30V
-Drive Voltage (Max Rds On, Min Rds On) 10V

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