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RDN120N25

MOSFET N-CH 250V 12A TO-220FN

Manufacturer ROHM Semiconductor
MPN RDN120N25
SPQ 500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Rds On (Max) @ Id, Vgs 210 mOhm @ 6A, 10V
-Power - Max 40W
-Supplier Device Package TO-220FN
-Catalog Drawings TO-220FM, TO-220FN
-Gate Charge (Qg) @ Vgs 62nC @ 10V
-FET Type N-Channel
-Vgs(th) (Max) @ Id 4V @ 1mA
-Input Capacitance (Ciss) @ Vds 1224pF @ 10V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
-Power Dissipation (Max) 40W (Tc)
-Vgs (Max) ±30V
-Drive Voltage (Max Rds On, Min Rds On) 10V
-Package / Case TO-220-3 Full Pack
-Drain to Source Voltage (Vdss) 250V
-Current - Continuous Drain (Id) @ 25°C 12A (Ta)
-Standard Package   500
-Packaging   Bulk  
-Family FETs - Single
-Mounting Type Through Hole
-Operating Temperature 150°C (TJ)
-Input Capacitance (Ciss) (Max) @ Vds 1224pF @ 10V
-Packaging Bulk
-Lead Free Status / RoHS Status 1
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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