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R6046ANZC8

MOSFET N-CH 10V DRIVE TO-3PF

Manufacturer ROHM Semiconductor
MPN R6046ANZC8
SPQ 360
ECCN --
Schedule B --
RoHS --
Datasheet R6046ANZC8.pdf

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Product parameter

-Rds On (Max) @ Id, Vgs 81 mOhm @ 23A, 10V
-Power - Max 120W
-Supplier Device Package TO-3PF
-Standard Package   360
-Packaging   Bulk  
-Family FETs - Single
-Mounting Type Through Hole
-Operating Temperature 150°C (TJ)
-Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
-Packaging Bulk
-Lead Free Status / RoHS Status 1
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Package / Case TO-220-3 Full Pack
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 46A (Ta)
-Gate Charge (Qg) @ Vgs 150nC @ 10V
-FET Type N-Channel
-Vgs(th) (Max) @ Id 4.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 6000pF @ 25V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
-Power Dissipation (Max) 120W (Tc)
-Vgs (Max) ±30V
-Drive Voltage (Max Rds On, Min Rds On) 10V

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