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R6012ANJTL

MOSFET N-CH 10V DRIVE LPTS

Manufacturer ROHM Semiconductor
MPN R6012ANJTL
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet R6012ANJTL.pdf
SP1027
Dollar $2.4366
RMB ¥20.23754
Stock type SP1027
Stock num 90
Stepped
num price
48+ $2.4366
50+ $2.34376
SP1028
Dollar $1.72515
RMB ¥14.32849
Stock type SP1028
Stock num 90
Stepped
num price
1+ $1.72515
10+ $1.67865
50+ $1.64765
100+ $1.61665
500+ $1.6089
1000+ $1.60425

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Product parameter

-Rds On (Max) @ Id, Vgs 420 mOhm @ 6A, 10V
-Power - Max 100W
-Supplier Device Package LPTS
-Gate Charge (Qg) @ Vgs 35nC @ 10V
-Packaging   Tape & Reel (TR)  
-Family FETs - Single
-Mounting Type Surface Mount
-Operating Temperature 150°C (TJ)
-Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
-Packaging Tape & Reel (TR)
-Vgs (Max) ±30V
-Drive Voltage (Max Rds On, Min Rds On) 10V
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss) 600V
-Standard Package   1,000
-Current - Continuous Drain (Id) @ 25掳C 12A (Ta)
-FET Type N-Channel
-Vgs(th) (Max) @ Id 4.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 1300pF @ 25V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
-Power Dissipation (Max) 100W (Tc)
-Current - Continuous Drain (Id) @ 25°C 12A (Ta)
-Lead Free Status / RoHS Status 1
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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