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PMWD30UN,518

MOSFET 2N-CH 30V 5A 8TSSOP

Manufacturer NXP Semiconductors
MPN PMWD30UN,518
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-TSSOP (0.173", 4.40mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 5A
-Gate Charge (Qg) @ Vgs 28nC @ 5V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 33 mOhm @ 3.5A, 4.5V
-Power - Max 2.3W
-Supplier Device Package 8-TSSOP
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchMOS™
-Vgs(th) (Max) @ Id 700mV @ 1mA
-Input Capacitance (Ciss) @ Vds 1478pF @ 10V

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