PHN210,118

MOSFET 2N-CH 30V 8SOIC

Manufacturer NXP Semiconductors MPN PHN210,118 SPQ 10000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	30V
-Standard Package	10,000
-Packaging	Tape & Reel (TR)
-Series	TrenchMOS™
-Vgs(th) (Max) @ Id	2.8V @ 1mA
-Input Capacitance (Ciss) @ Vds	250pF @ 20V
-Rds On (Max) @ Id, Vgs	100 mOhm @ 2.2A, 10V
-Power - Max	2W
-Supplier Device Package	8-SO
-Gate Charge (Qg) @ Vgs	6nC @ 10V
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount