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PHKD13N03LT,518

MOSFET 2N-CH 30V 10.4A 8SOIC

Manufacturer NXP Semiconductors
MPN PHKD13N03LT,518
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet PHKD13N03LT,518.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 10.4A
-Gate Charge (Qg) @ Vgs 10.7nC @ 5V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 20 mOhm @ 8A, 10V
-Power - Max 3.57W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchMOS™
-Vgs(th) (Max) @ Id 2V @ 250µA
-Input Capacitance (Ciss) @ Vds 752pF @ 15V

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