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PEMB13,115

TRANS 2PNP PREBIAS 0.3W SOT666

Manufacturer Nexperia
MPN PEMB13,115
SPQ 4000
ECCN --
Schedule B --
RoHS --
Datasheet PEMB13,115.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 100mV @ 250碌A, 5mA
-Package / Case SOT-563, SOT-666
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Supplier Device Package SOT-666
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 300mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   4,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 1碌A

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