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PDTA113ES,126

TRANS PREBIAS PNP 500MW TO92-3

Manufacturer NXP Semiconductors
MPN PDTA113ES,126
SPQ 2000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 150mV @ 1.5mA, 30mA
-Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
-Transistor Type PNP - Pre-Biased
-Supplier Device Package TO-92-3
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Through Hole
-DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 40mA, 5V
-Resistor - Base (R1) (Ohms) 1k
-Power - Max 500mW
-Resistor - Emitter Base (R2) (Ohms) 1k
-Standard Package   2,000
-Packaging   Tape & Box (TB)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 1µA

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