| -Vce Saturation (Max) @ Ib, Ic |
1.15V @ 8mA, 800mA |
| -Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| -Transistor Type |
NPN - Pre-Biased |
| -Supplier Device Package |
TO-92-3 |
| -Current - Collector (Ic) (Max) |
800mA |
| -Voltage - Collector Emitter Breakdown (Max) |
40V |
| -Mounting Type |
Through Hole |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
500 @ 300mA, 5V |
| -Resistor - Base (R1) (Ohms) |
2.2k |
| -Power - Max |
700mW |
| -Resistor - Emitter Base (R2) (Ohms) |
10k |
| -Standard Package |
2,000 |
| -Packaging |
Tape & Box (TB) |
| -Family |
Transistors (BJT) - Single, Pre-Biased |
| -Current - Collector Cutoff (Max) |
500nA |
