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PBRN113ZK,115

TRANS PREBIAS NPN 250MW SMT3

Manufacturer NXP Semiconductors
MPN PBRN113ZK,115
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type NPN - Pre-Biased
-Supplier Device Package SMT3
-Current - Collector (Ic) (Max) 600mA
-Voltage - Collector Emitter Breakdown (Max) 40V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 300mA, 5V
-Resistor - Base (R1) (Ohms) 1k
-Power - Max 250mW
-Resistor - Emitter Base (R2) (Ohms) 10k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

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