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2N2102

Transistor: NPN; bipolar; 65V; 1A; 1/5W; TO39; 6dB

Manufacturer STMicroelectronics
MPN 2N2102
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet 2N2102.pdf

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Product parameter

-Collector- Base Voltage VCBO: 120 V
-Collector-Emitter Saturation Voltage: 0.5 V
-Minimum Operating Temperature: - 65 C
-Package / Case: TO-39
-Gain Bandwidth Product fT: 60 MHz
-Mounting Style: Through Hole
-Maximum DC Collector Current: 1 A
-Continuous Collector Current: 1 A
-Manufacturer: Central Semiconductor
-Transistor Polarity: NPN
-Brand: Central Semiconductor
-RoHS:  Details
-Collector- Emitter Voltage VCEO Max: 65 V
-Width: 9.4 mm
-Packaging: Bulk
-Pd - Power Dissipation: 1 W
-Height: 6.6 mm
-Configuration: Single
-Emitter- Base Voltage VEBO: 7 V
-Length: 9.4 mm
-DC Collector/Base Gain hfe Min: 10
-Series: 2N2102
-Factory Pack Quantity: 500
-Part # Aliases: BK
-Product Category: Bipolar Transistors - BJT
-Maximum Operating Temperature: + 150 C

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