| -Collector- Base Voltage VCBO: |
30 V |
| -Packaging: |
Bulk |
| -Pd - Power Dissipation: |
200 mW |
| -Height: |
5.33 mm |
| -Configuration: |
Single |
| -Emitter- Base Voltage VEBO: |
2.5 V |
| -DC Current Gain hFE Max: |
150 |
| -Length: |
5.84 mm |
| -Manufacturer: |
Central Semiconductor |
| -Transistor Polarity: |
NPN |
| -Brand: |
Central Semiconductor |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
15 V |
| -Width: |
5.84 mm |
| -Minimum Operating Temperature: |
- 65 C |
| -Package / Case: |
TO-72 |
| -Gain Bandwidth Product fT: |
1.9 GHz |
| -Mounting Style: |
Through Hole |
| -Maximum DC Collector Current: |
40 mA |
| -Continuous Collector Current: |
40 mA |
| -DC Collector/Base Gain hfe Min: |
30 |
| -Series: |
2N2857 |
| -Factory Pack Quantity: |
2000 |
| -Part # Aliases: |
BK |
| -Product Category: |
Bipolar Transistors - BJT |
| -Maximum Operating Temperature: |
+ 200 C |
