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2N4338

MOSFET N-CH 50V 600UA TO-206AA

Manufacturer Vishay
MPN 2N4338
SPQ 200
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Packaging: Reel
-Rds On - Drain-Source Resistance: 2.5 kOhms
-Manufacturer: InterFET
-Transistor Polarity: N-Channel
-Technology: Si
-RoHS:  Details
-Vgs - Gate-Source Breakdown Voltage: - 50 V
-Id - Continuous Drain Current: 100 pA
-Configuration: Single
-Mounting Style: Through Hole
-Forward Transconductance - Min: 600 uS
-Drain-Source Current at Vgs=0: 600 uA
-Pd - Power Dissipation: 300 mW
-Factory Pack Quantity: 1
-Brand: InterFET
-Package / Case: TO-18-3
-Product Category: JFET
-Vds - Drain-Source Breakdown Voltage: 15 V
-Gate-Source Cutoff Voltage: - 1 V

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