| -Collector-Emitter Saturation Voltage: |
0.4 V |
| -Collector- Base Voltage VCBO: |
30 V |
| -Minimum Operating Temperature: |
- 65 C |
| -Package / Case: |
TO-92 |
| -Gain Bandwidth Product fT: |
900 MHz |
| -Unit Weight: |
0.016000 oz |
| -Emitter- Base Voltage VEBO: |
3 V |
| -Length: |
5.21 mm |
| -DC Collector/Base Gain hfe Min: |
20 |
| -Series: |
2N5770 |
| -Factory Pack Quantity: |
2500 |
| -Part # Aliases: |
TR |
| -Product Category: |
Bipolar Transistors - BJT |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
4.19 mm |
| -Packaging: |
Bulk |
| -Pd - Power Dissipation: |
625 mW |
| -Height: |
5.33 mm |
| -Configuration: |
Single |
| -Mounting Style: |
Through Hole |
| -Maximum DC Collector Current: |
0.05 A |
| -Continuous Collector Current: |
50 mA |
| -Manufacturer: |
Central Semiconductor |
| -Transistor Polarity: |
NPN |
| -Brand: |
Central Semiconductor |
| -RoHS: |
In Transition |
| -Collector- Emitter Voltage VCEO Max: |
15 V |
