|
|
| Demand quantity | Target price | ||
| Contact number | name | ||
| company | |||
| -Current - Gate to Anode Leakage (Igao) | 10nA |
| -Part Status | Obsolete |
| -Manufacturer | ON Semiconductor |
| -Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| -Current - Peak | 150nA |
| -Family | Transistors - Programmable Unijunction |
| -Current - Valley (Iv) | 25µA |
| -Power Dissipation (Max) | 300mW |
| -Category | Discrete Semiconductor Products |
| -Voltage - Offset (Vt) | 600mV |
| -Voltage | 40V |
| -Voltage - Output | 11V |
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