| -Vce Saturation (Max) @ Ib, Ic |
2.5V @ 1A, 10A |
| -Package / Case |
3-ESIP |
| -Transistor Type |
NPN |
| -Current - Collector (Ic) (Max) |
17A |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
200V |
| -Mounting Type |
Through Hole |
| -Operating Temperature |
150°C (TJ) |
| -Packaging |
Bulk |
| -Frequency - Transition |
20MHz |
| -Power - Max |
200W |
| -Supplier Device Package |
MT-200 |
| -Part Status |
Active |
| -Manufacturer |
Sanken |
| -Family |
Transistors - Bipolar (BJT) - Single |
| -Current - Collector Cutoff (Max) |
100µA (ICBO) |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 8A, 4V |
