| -Noise Figure (dB Typ @ f) |
1.1dB @ 1GHz |
| -Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| -Gain |
11dB |
| -Supplier Device Package |
SC-59 |
| -Part Status |
Discontinued |
| -Manufacturer |
Toshiba Semiconductor and Storage |
| -Family |
Transistors - Bipolar (BJT) - RF |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 20mA, 10V |
| -Frequency - Transition |
7GHz |
| -Power - Max |
150mW |
| -Transistor Type |
NPN |
| -Current - Collector (Ic) (Max) |
80mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
12V |
| -Mounting Type |
Surface Mount |
| -Packaging |
Cut Tape (CT) |
