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NSBA144WDP6T5G

TRANS 2PNP PREBIAS 0.408W SOT963

Manufacturer onsemi
MPN NSBA144WDP6T5G
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet NSBA144WDP6T5G.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
-Package / Case SOT-963
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Supplier Device Package SOT-963
-PCN Design/Specification Wire Bond 01/Dec/2010
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Resistor - Base (R1) (Ohms) 47k
-Power - Max 408mW
-Resistor - Emitter Base (R2) (Ohms) 22k
-Standard Package   8,000
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V

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