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NSBA124EDXV6T1G

50V Dual Bipolar Digital Transistor

Manufacturer onsemi
MPN NSBA124EDXV6T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --
SP1027
Dollar $0.1054
RMB ¥0.87542
Stock type SP1027
Stock num 48000
Stepped
num price
5515+ $0.1054
10000+ $0.09393
100000+ $0.07874

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300碌A, 10mA
-PCN Assembly/Origin Wafer Source Addition 26/Nov/2014
-Power - Max 500mW
-Resistor - Emitter Base (R2) (Ohms) 22k
-Standard Package   4,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Resistor - Base (R1) (Ohms) 22k
-Package / Case SOT-563, SOT-666
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Supplier Device Package SOT-563
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V

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