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NSBA123JDXV6T1G

TRANS 2PNP PREBIAS 0.5W SOT563

制造商 onsemi
制造商零件编号 NSBA123JDXV6T1G
标准包装 4000
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
-Package / Case SOT-563, SOT-666
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 500mW
-PCN Obsolescence/ EOL Multiple Devices 03/Apr/2007
-Supplier Device Package SOT-563
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V

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