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NSB4904DW1T1G

TRANS NPN/PNP PREBIAS 0.25W SC88

Manufacturer onsemi
MPN NSB4904DW1T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet NSB4904DW1T1G.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
-PCN Assembly/Origin Wafer Source Addition 26/Nov/2014
-Power - Max 250mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   3,000
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
-Resistor - Base (R1) (Ohms) 47k
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Supplier Device Package SC-88/SC70-6/SOT-363
-PCN Design/Specification Copper Wire 08/Jun/2009
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

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