NE3516S02-T1C-A

IC HJ-FET RF N-CH S02 4-MICROX

Manufacturer California Eastern Laboratories MPN NE3516S02-T1C-A SPQ 2000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Package / Case	4-SMD, Flat Leads
-Transistor Type	N-Channel GaAs HJ-FET
-Supplier Device Package	S02
-Voltage - Test	2V
-Voltage - Rated	4V
-Family	RF FETs
-Noise Figure	0.35dB
-Gain	14dB
-Power - Output	165mW
-Standard Package	2,000
-Packaging	Tape & Reel (TR)
-Current - Test	10mA
-Frequency	12GHz
-Current Rating	60mA