NE3514S02-T1D-A

制造商 California Eastern Laboratories 制造商零件编号 NE3514S02-T1D-A 标准包装 10000 ECCN -- Schedule B -- RoHS -- 规格说明书 NE3514S02-T1D-A.pdf

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Product:	RF JFET
-Gain:	10 dB
-Forward Transconductance - Min:	55 mS
-Pd - Power Dissipation:	165 mW
-Technology:	GaAs
-RoHS:	Details
-Vgs - Gate-Source Breakdown Voltage:	- 3 V
-Id - Continuous Drain Current:	70 mA
-NF - Noise Figure:	0.75 dB
-Transistor Type:	pHEMT
-Maximum Operating Temperature:	+ 125 C
-Operating Frequency:	20 GHz
-Packaging:	Reel
-Manufacturer:	CEL
-Factory Pack Quantity:	10000
-Brand:	CEL
-Package / Case:	S0-2
-Product Category:	RF JFET Transistors
-Vds - Drain-Source Breakdown Voltage:	4 V
-Type:	GaAs pHEMT
-Mounting Style:	SMD/SMT