NE3513M04-A

IC HJ-FET RF N-CH LNA M04 4SMD

Manufacturer California Eastern Laboratories MPN NE3513M04-A SPQ 100 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Package / Case	SOT-343F
-Transistor Type	N-Channel GaAs HJ-FET
-Supplier Device Package	M04
-Voltage - Test	2V
-Voltage - Rated	4V
-Family	RF FETs
-Noise Figure	0.65dB
-Gain	13dB
-Power - Output	125mW
-Standard Package	1
-Packaging	Bulk
-Current - Test	10mA
-Frequency	12GHz
-Current Rating	60mA