NE3210S01

FET RF 4V 12GHZ S01

制造商 California Eastern Laboratories 制造商零件编号 NE3210S01 标准包装 1 ECCN -- Schedule B -- RoHS -- 规格说明书 NE3210S01.pdf

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Product:	RF JFET
-Packaging:	Bulk
-Forward Transconductance - Min:	55 mS
-Pd - Power Dissipation:	165 mW
-Factory Pack Quantity:	1
-Brand:	CEL
-Package / Case:	SO-1
-Product Category:	RF JFET Transistors
-Vds - Drain-Source Breakdown Voltage:	4 V
-Type:	GaAs HFET
-Gate-Source Cutoff Voltage:	2 V
-Maximum Operating Temperature:	+ 125 C
-Operating Frequency:	12 GHz
-Gain:	13.5 dB
-Manufacturer:	CEL
-Transistor Polarity:	N-Channel
-Technology:	GaAs
-RoHS:	Details
-Vgs - Gate-Source Breakdown Voltage:	- 3 V
-Id - Continuous Drain Current:	70 mA
-NF - Noise Figure:	0.35 dB
-Transistor Type:	HFET
-Mounting Style:	SMD/SMT