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MUN5311DW1T1

TRANS PREBIAS NPN/PNP SOT363

Manufacturer onsemi
MPN MUN5311DW1T1
SPQ 10
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Resistor - Emitter Base (R2) (Ohms) 10k
-Standard Package   10
-Packaging   Cut Tape (CT)  
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
-Resistor - Base (R1) (Ohms) 10k
-Power - Max 250mW
-PCN Obsolescence/ EOL Multiple Devices 07/Jul/2010
-Supplier Device Package SC-88/SC70-6/SOT-363
-PCN Design/Specification Copper Wire 08/Jun/2009
-Current - Collector (Ic) (Max) 100mA
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

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