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MUN5130DW1T1G

; EOL: REPL: MUN5130T1G; LTB(d/m/y):06/04/2007; LTS:06/10/2007

Manufacturer onsemi
MPN MUN5130DW1T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --
SP1027
Dollar $0.06355
RMB ¥0.52782
Stock type SP1027
Stock num 45000
Stepped
num price
9147+ $0.06355
10274+ $0.05658
100000+ $0.04743

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Resistor - Emitter Base (R2) (Ohms) 1k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Resistor - Base (R1) (Ohms) 1k
-Power - Max 250mW
-PCN Obsolescence/ EOL Multiple Devices 06/Oct/2006
-Supplier Device Package SC-88/SC70-6/SOT-363
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V

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