English 简体中文 日本語

MUN5130DW1T1G

; EOL: REPL: MUN5130T1G; LTB(d/m/y):06/04/2007; LTS:06/10/2007

制造商 onsemi
制造商零件编号 MUN5130DW1T1G
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 --

询价

需求数量 目标价格
联系电话 姓名
公司 邮箱

产品参数

-Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Resistor - Emitter Base (R2) (Ohms) 1k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Resistor - Base (R1) (Ohms) 1k
-Power - Max 250mW
-PCN Obsolescence/ EOL Multiple Devices 06/Oct/2006
-Supplier Device Package SC-88/SC70-6/SOT-363
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V

Copyright © 1997-2013 NetEase. All Rights Reserved.