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MUN5112DW1T1G

Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; SOT363; R1: 22kΩ

Manufacturer onsemi
MPN MUN5112DW1T1G
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --
SP1027
Dollar $0.05332
RMB ¥0.44286
Stock type SP1027
Stock num 42000
Stepped
num price
10910+ $0.05332

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
-PCN Assembly/Origin Wafer Source Addition 26/Nov/2014
-Power - Max 250mW
-PCN Obsolescence/ EOL Multiple Devices 30/Jun/2006
-Supplier Device Package SC-88/SC70-6/SOT-363
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
-Resistor - Base (R1) (Ohms) 22k
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Resistor - Emitter Base (R2) (Ohms) 22k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

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