MS2200

TRANS RF BIPO 1167W 43.2A MS102

Manufacturer Microchip Technology MPN MS2200 SPQ 25 ECCN -- Schedule B -- RoHS -- Datasheet MS2200.pdf

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Demand quantity		Target price
Contact number		name
company		email

Product parameter

-Frequency - Transition	400MHz ~ 500MHz
-Gain	9.7dB
-Transistor Type	NPN
-Current - Collector (Ic) (Max)	43.2A
-Voltage - Collector Emitter Breakdown (Max)	65V
-Mounting Type	Chassis Mount
-Package / Case	M102
-Power - Max	1167W
-Supplier Device Package	M102
-Packaging	Bulk
-Family	RF Transistors (BJT)
-DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 5V