MP4411(Q)

MOSFET 4N-CH 100V 3A 12-SIP

Manufacturer Toshiba MPN MP4411(Q) SPQ 20 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	12-SIP
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	3A
-Gate Charge (Qg) @ Vgs	13.5nC @ 10V
-FET Type	4 N-Channel (H-Bridge)
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	280pF @ 10V
-Rds On (Max) @ Id, Vgs	350 mOhm @ 2A, 10V
-Power - Max	4.4W
-Supplier Device Package	12-SIP (S-12)
-Standard Package	20
-Packaging	Bulk
-Family	FETs - Arrays
-Mounting Type	Through Hole