| -Product: |
IGBT Silicon Modules |
| -Width: |
34 mm |
| -Length: |
94 mm |
| -Series: |
MID100 |
| -Minimum Operating Temperature: |
- 40 C |
| -Factory Pack Quantity: |
6 |
| -RoHS: |
Details |
| -Gate-Emitter Leakage Current: |
300 nA |
| -Collector- Emitter Voltage VCEO Max: |
1.2 kV |
| -Configuration: |
Single |
| -Maximum Gate Emitter Voltage: |
+/- 20 V |
| -ECCN |
EAR99 |
| -Collector-Emitter Saturation Voltage: |
1.2 kV |
| -Packaging: |
Bulk |
| -Manufacturer: |
IXYS |
| -Pd - Power Dissipation: |
560 W |
| -Continuous Collector Current at 25 C: |
135 A |
| -Brand: |
IXYS |
| -Package / Case: |
Y4-M5-7 |
| -Product Category: |
IGBT Modules |
| -Height: |
30 mm |
| -Mounting Style: |
Screw |
| -Maximum Operating Temperature: |
+ 125 C |
