J176,126

JFET P-CH 30V 400MW TO92-3

Manufacturer NXP Semiconductors MPN J176,126 SPQ 2000 ECCN -- Schedule B -- RoHS -- Datasheet J176,126.pdf

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Product parameter

-Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
-Voltage - Breakdown (V(BR)GSS)	30V
-Drain to Source Voltage (Vdss)	30V
-Standard Package	2,000
-Resistance - RDS(On)	250 Ohm
-FET Type	P-Channel
-Mounting Type	Through Hole
-Power - Max	400mW
-Current - Drain (Idss) @ Vds (Vgs=0)	2mA @ 15V
-Supplier Device Package	TO-92
-Voltage - Cutoff (VGS off) @ Id	1V @ 10nA
-Packaging	Tape & Box (TB)
-Family	JFETs (Junction Field Effect)
-Input Capacitance (Ciss) @ Vds	8pF @ 10V (VGS)