J112,126

JFET N-CH 40V 400MW TO92-3

Manufacturer NXP Semiconductors MPN J112,126 SPQ 2000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
-Voltage - Breakdown (V(BR)GSS)	40V
-Drain to Source Voltage (Vdss)	40V
-Standard Package	2,000
-Resistance - RDS(On)	50 Ohm
-FET Type	N-Channel
-Mounting Type	Through Hole
-Power - Max	400mW
-Current - Drain (Idss) @ Vds (Vgs=0)	5mA @ 15V
-Supplier Device Package	TO-92-3
-Voltage - Cutoff (VGS off) @ Id	1V @ 1µA
-Packaging	Tape & Box (TB)
-Family	JFETs (Junction Field Effect)
-Input Capacitance (Ciss) @ Vds	6pF @ 10V (VGS)