IXFN38N80Q2

Single N-Channel 800 Vds 220 mOhm 735 W Power Mosfet - SOT-227B

Manufacturer IXYS Corporation MPN IXFN38N80Q2 SPQ 10 ECCN ECL99 Schedule B -- RoHS -- Datasheet IXFN38N80Q2.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	SOT-227-4, miniBLOC
-Drain to Source Voltage (Vdss)	800V
-Current - Continuous Drain (Id) @ 25°C	38A
-Gate Charge (Qg) @ Vgs	190nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Modules
-Mounting Type	Chassis Mount
-ECCN	ECL99
-Rds On (Max) @ Id, Vgs	220 mOhm @ 500mA, 10V
-Power - Max	735W
-Supplier Device Package	SOT-227B
-Standard Package	10
-Packaging	Tube
-Series	HiPerFET™
-Vgs(th) (Max) @ Id	4.5V @ 8mA
-Input Capacitance (Ciss) @ Vds	8340pF @ 25V